Defects around self-organized InAs quantum dots measured by slow positron beam

Self-organized InAs quantum dots (QDs) have been fabricated by molecular beam epitaxy. The authors try to use a slow positron beam to detect defects in and around self-organized QDs, and point defects are observed in GaAs cap layer above QDs. For the self-organized InAs QDs without strain-reducing layer, it is free of defects. However, by introducing a strain-reducing layer, the density of point defects around larger sized InAs QDs increased. The above results suggest that low energy positron beam measurements may be a good approach to detect depth profiles of defects in QD materials. (c) 2007 American Institute of Physics.

A DYNAMIC LASER LIGHT-SCATTERING STUDY OF CHITOSAN IN AQUEOUS-SOLUTION

The solution behavior of four chitosans (91% deacetylated chitin) with different molecular weights in 0.2M CH3COOH/0.1M CH3COONa aqueous solution was investigated at 25 degrees C by dynamic laser light scattering (LLS). The Laplace inversion of the precisely measured intensity-intensity time correlation function leads us to an estimate of the line-width distribution G(Gamma), which could be further reduced to a translational diffusion coefficient distribution G(D). By using a combination of static and dynamic LLS results, i.e. Mw and G(D), we were able to establish a calibration of D = k(D)M(-alpha D) with k(D) = (3.14 +/- 0.20) X 10(-4) and alpha(D) = 0.655 +/- 0.015. By using this calibration, we successfully converted G(D) into a molecular weight distribution f(w)(M). The larger alpha(D) value confirms that the chitosan chain is slightly extended in aqueous solution even in the presence of salts. This is mainly due to its backbone and polyelectrolytes nature. As a very sensitive technique, our dynamic LLS results also revealed that even in dilute solution chitosan still forms a small amount of larger sized aggregates that have ben overlooked in previous studies. The calibration obtained in this study will provide another way to characterize the molecular weight distribution of chitosan in aqueous solution at room temperature. (C) 1995 John Wiley & Sons, Inc.

Pressure dependence of Mn2+ luminescence in differently sized ZnS : Mn nanoparticles

The pressure behavior of Mn2+ emission in the 10-, 4.5-, 3.5-, 3-, and 1-nm-sized ZnS:Mn2+ nanoparticles is investigated. The emission shifts to lower energies with increasing pressure, and the shift rate (the absolute value of the pressure coefficient) is larger in the ZnS:Mn2+ nanoparticles than in bulk. The pressure coefficient increases with the decrease in particle size with the 1-nm-sized particles as an exception. Pressure coefficient calculations based on the crystal field theory are in agreement with the experimental results. The pressure dependence of the emission intensity is also size dependent. For nanoparticles 1 and 3 nm in size, the luminescence intensity of Mn2+ decreases dramatically with increasing pressure, while, for bulk and particles with average sizes of 3.5, 4.5, and 10 nm, the luminescence intensity of Mn2+ is virtually unchanged at different pressures. The bandwidth increases faster with increasing pressure for smaller particles. This is perhaps due to the fact that there are more Mn2+ ions at the near-surface sites and because the phonon frequency is greater for smaller particles. These new phenomena provide some insight into the luminescence behavior of Mn2+ in ZnS:Mn2+ nanoparticles.

Excitation transfer in vertically self-organized pairs of unequal-sized InAs/GaAs quantum dots

The excitation transfer processes in vertically self organized pairs of unequal-sized quantum dots (QD's), which are created in InAs/GaAs bilayers with different InAs deposition amounts in the first and second layers, have been investigated experimentally by photoluminescence technique. The distance between the two dot layers is varied from 3 to 12 nm. The optical properties of the formed pairs of unequal-sized QD's with clearly discernible ground-state transition energy depend on the spacer thickness. When the spacer layer of GaAs is thin enough, only one photoluminescence peak related to the large QD ensemble has been observed as a result of strong electronic coupling in the InAs QD pairs. The results provide evidence for nonresonant energy transfer from the smaller QDs in the second layer to the larger QD's in the first layer in such an asymmetric QD pair.